基本信息
杜小龙 男 汉族 博导 中国科学院物理所
电子邮件:xldu@aphy.iphy.ac.cn
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研究领域

   

教育背景

   
学位
北京理工大学 19950901--19990220 博士
出国学习工作
1999-2002日本国立千叶大学光电子技术研究中心博士后,从事宽禁带半导体ZnOGaN等材料及其光电子器件的制备和物性研究工作。

工作经历

   
工作简历

2008/1-2011/12  (每年2个月)挪威奥斯陆大学材料科学和纳米技术研究中心访问教授(Visiting professorship),从事ZnO半导体缺陷与物性的合作研究,并与Andrej Kuznetsov教授合作指导研究生。由挪威国研究理事会项目资助(FRINAT “UnderstandingZnO” project)。

2005/7- 至今:  中国科学院物理研究所研究员、博士生导师(2006.2起)、清洁能源中心副主任(2006.2起)、北京凝聚态物理国家实验室研究组长(2007.1起)。
主要研究内容包括ZnO基薄膜材料与纳米材料制备、物性研究以及光电子器件和太阳电池研制,新型氧化物材料和器件探索。

2002/7-2005/6:中国科学院物理研究所,副研究员

1999/9-2002/7:日本千叶大学光电子技术研究中心,博士后 

1992/7-1999/7:北京理工大学应用物理系,助教、讲师

社会兼职
   

教授课程

   

专利与奖励

   
奖励信息
   
专利成果
授权专利
1. 杜小龙、王喜娜、曾兆权、袁洪涛、梅增霞、薛其坤、贾金锋:一种在Si(111)衬底上制备高质量ZnO单晶薄膜的方法,专利号:200610064977.5, 授权公告日:2008年10月1日.
2. 李含冬;杜小龙;梅增霞;曾兆权;袁洪涛;王喜娜;董 靖;张天冲;薛其坤:一种耐活性氧腐蚀的新型高效衬底加热装置, 专利号:200610113604.2,授权公告日:2008年12月10日.
3. 郑浩,杜小龙,薛其坤,贾金锋,顾长志:一种氧化锌薄膜的刻蚀方法,专利号:200510002695.8,授权公告日:2007年1月10日.
4. 杜小龙,薛其坤,英敏菊,梅增霞,曾兆权,郑浩:在(La,Sr)(Al,Ta)O3上制备高质量ZnO单晶薄膜的方法,专利号:200410071047.3, 授权公告日:2007年1月10日.
5. 杜小龙,薛其坤,贾金锋,梅增霞,英敏菊,曾兆权,郑浩,袁洪涛:一种制备高质量氧化锌单晶薄膜的三缓冲层方法,专利号:200410086325.2,授权公告日:2007年2月28日.
6. 杜小龙、曾兆权、袁洪涛、薛其坤、贾金锋、李含冬、王喜娜:一种用于提炼高纯材料的高真空原位精练装置,专利号:200510105687.6,授权公告日:2007年2月28日.
7. 杜小龙,薛其坤,贾金锋,曾兆权,袁洪涛,英敏菊,郑浩:一种在铝酸镁衬底上制备ZnO单晶薄膜的方法,专利号:200510064653.7,授权公告日:2007年4月4日.
8. 杜小龙,薛其坤,贾金锋,曾兆权,袁洪涛,英敏菊,梅增霞,郑浩:含三种掺杂剂的p型氧化锌薄膜及其制造方法,专利号:200510063056.2,授权公告日:2007年5月23日.
9. 杜小龙、袁洪涛、曾兆权、薛其坤、贾金锋、王喜娜、李含冬:一种高纯材料的高真空原位两步精练方法,专利号:200510105454.6,授权公告日:2007年5月23日.
10. 杜小龙,薛其坤,贾金锋,曾兆权,袁洪涛,张泽,刘玉资,英敏菊,郑浩:一种在铝酸镁衬底上制备高质量锌极性ZnO单晶薄膜的方法,专利号:200510069276.6,授权公告日:2007年7月25日.

出版信息

   
发表论文
最近五年发表的文章
1. T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu and X. L. Du:Visible-Blind Ultraviolet Photodetector Based on Double Heterojunction of n-ZnO/insulator-MgO/p-Si, Appl. Phys. Lett. 94, 113508 (2009).
2. Xiaolong Du, Zengxia Mei, Zhanglong Liu, Yang Guo, Tianchong Zhang, Yaonan Hou, Ze Zhang, Qikun Xue and Andrej Yu Kuznetsov,Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors, Adv. Mater. (2009) (in press)
3. T. C. Zhang, Z. X. Mei, Y. Guo, Q. K. Xue and X. L. Du: Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition, J. Phys.:D 42, 065303 (2009)
4. D. Lagarde, A. Balocchi, P. Renucci, H. Carrère, T. Amand, X. Marie, Z. X. Mei, X. L. Du: Hole spin quantum beats in bulk ZnO, Phys. Rev. B 79, 045204 (2009).
5. H. T. Yuan, Y. Z. Liu, Z. Q. Zeng, Z. X. Mei, Y. Guo, X. L. Du, P. Zhang, J. F. Jia, Z. Zhang and Q. K. Xue. Formation of metastable MgO structures on type-III oxide surfaces: effect of periodic out-of-plane electric dipole moment of substrates, J. Crystal Growth 311, 425 (2009).
6. Ying Min-Ju, Zhang Ping, and Du Xiao-Long: First-principle study of Mg adsorption on Si(111) surfaces, Chinese Physics B, 18, 0275 (2009)
7. X. N. Wang, Y. Wang, J. Zou, T. C. Zhang, Z. X. Mei, Y. Guo, Q. K. Xue, X. L. Du, X. N. Zhang, X. D. Han, and Z. Zhang: Thermal stability of Mg2Si epitaxial film formed on Si(111) substrate by solid phase reaction, Chinese Physics B, 18 (7), xxxx (2009) (in press)
8. 崔秀芝 张天冲 梅增霞 刘章龙 刘尧平 郭阳 苏希玉 薛其坤 杜小龙: 湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响, 物理学报 58, 309 (2009).
9. Ding Lan, Yuren Wang, Xiaolong Du, Zengxia Mei, Qikun Xue, Ke Wang, Xiaodong Han, and Ze Zhang: Large Scale Fabrication of Periodical Bowl-like Micropatterns of Single Crystal ZnO, Crystal Growth & Design 8, 2912 (2008).
10. D. Lagarde, A. Balocchi, P. Renucci, H. Carrère, F. Zhao, T. Amand, X. Marie, Z. X. Mei, X. L. Du, and Q. K. Xue: Exciton and hole spin dynamics in ZnO investigated by time-resolved photoluminescence experiments, Phys. Rev. B 78, 033203 (2008).
11. X. Z. Cui, T. C. Zhang, Z. X. Mei*, Z. L. Liu, Y. P. Liu, Y. Guo, Q. K. Xue and X. L. Du: Growth of single crystalline ZnO film with two-dimensional periodic structure on Si (111) substrate by molecular beam epitaxy, J. Crystal Growth 310, 5428 (2008).
12. X. N. Wang, Y. Wang, Z. X. Mei, J. Dong, Z. Q. Zeng, H. T. Yuan,T. C. Zhang, X. L. Du, J. F. Jia, Q. K. Xue, X. N. Zhang, Z. Zhang, Z. F. Li and W. Lu: Low-temperature engineering for high-quality epitaxy of ZnO film on Si(111) substrate, Appl. Phys. Lett. 90, 151912 (2007).
13. Z. Q. Zeng, Y. Z. Liu, X. L. Du*, H. T. Yuan, Z. X. Mei, J. F. Jia, Q. K. Xue, and Z. Zhang: Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films, Appl. Phys. Lett. 90, 081911 (2007)
14. H.D. Li, X.N. Zhang, Z.X. Mei, X.L. Du, Q.K. Xue, Z. Zhang:Epitaxial growth of CaO films on MgO(001) surface: strain relaxation at the CaO/MgO heterointerface, J. Appl. Phys. (communication) 102, 046103 (2007)
15. Y. Wang, X. N. Wang, Z. X. Mei, X. L. Du, J. Zou, J. F. Jia, Q. K. Xue, X. N. Zhang, Z. Zhang: Epitaxial orientation of Mg2Si(110)  thin film on  Si(111) substrate, J. Appl. Phys. (communication) 102, 126102 (2007)
16. H.D. Li, X.N. Zhang, Z. Zhang, Z.X. Mei, X.L. Du, Q.K. Xue: Structure stability of epitaxial MgO-CaO solid-solution films: effect of diffusion, J. Appl. Phys. (communication), 101, 106102 (2007).
17. S.J. Young, L.W. Ji, T.H. Fang, S.J. Chang, Y.K. Su, X.L. Du: ZnO ultraviolet photodiodes with Pd contact electrodes, Acta Materialia 55, 329(2007).
18. Z. X. Mei, X. L. Du, Y. Wang, M. J. Ying, Z. Q. Zeng, H. T. Yuan, J. F. Jia, and Q. K. Xue: Tri-buffer process: a new approach to obtain high-quality ZnO epitaxial films on sapphire substrates, J. Electron. Mater., 36, 452(2007)
19. H. Zheng, X. L. Du, Q. Luo, J. F. Jia, C. Z. Gu, and Q. K. Xue: Wet chemical etching of ZnO film by aqueous acidic salt, Thin Solid Films 515, 3967–3970 (2007).
20. S.J. Young , L.W. Ji , S.J. Chang, S.H. Liang, K.T. Lam, T.H. Fang, K.J. Chen, X.L. Du, Q.K. Xue: ZnO-based MIS photodetectors, Sensors and Actuators A 135, 529–533 (2007).
21. S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du:ZnO Metal-Semiconductor-Metal Ultraviolet Photodiodes with Au Contacts, J.Electrochem. Soc., 154, H26-H29 (2007).
22. H. T. Yuan, Z. Q. Zeng, Z. X. Mei, X. L. Du, J. F. Jia, Q. K. Xue: Surfactant effects of lithium on molecular beam epitaxy of ZnO, J. Phys.: Condensed Matter, 19, 482001 (2007).
23. 王勇,袁洪涛,杜小龙,梅增霞,曾兆权,邹进,贾金锋,薛其坤,张泽: Mg预处理蓝宝石衬底法制备的Zn极性ZnO外延薄膜的结构研究, 电子显微学报, 26(5), 405-410 (2007).
24. YUAN Hong-Tao, LIU Yu-Zi, DU Xiao-Long, ZENG Zhao-Quan, MEI Zeng-Xia, WANG Yong, JIA Jin-Feng,XUE Qi-Kun, ZHANG Ze: Controlled growth of Zn-polar ZnO films on MgO-modified a-Al2O3(0001) surface, Chin. Phys. Lett. 24, 2408 (2007).
25. D. Lagarde, L. Lombez, A. Balocchi, P. Renucci, H. Carrère, T. Amand, X. Marie, Z. X. Mei, X. L. Du, and Q. K. Xue: Exciton spin dynamics in ZnO epilayers, phys. stat. sol. (c) 4, 472- 474 (2007).
26. S.J. Young , S.J. Chang, Y. P. Chen, S.H. Liang, L.W. Ji, K.T. Lam, X. L. Du, Q. K. Xue and Y. S. Sun: ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes, IET Optoelectron. 1, 135 (2007).
27. 王喜娜,梅增霞,王勇,杜小龙,张晓娜,贾金锋,薛其坤,张泽,硅基高质量氧化锌外延薄膜的界面控制,电子显微学报,26(6), 570-575(2007).
28. Yu Zi Liu, Z. Q. Zeng, H.T. Yuan, X. L. Du, X. D. Han, Q. K. Xue, Z Zhang: Inversion domain boundary in ZnO film, Philosophical Magazine Letters, 87, 687-693(2007).
29. Y. Wang, Z. X. Mei, H. T. Yuan, X. L. Du, J. Zou, J. F. Jia, Q. K. Xue and Z. Zhang: Effect of MgO in ZnO films grown on nitrided sapphires, J. Crystal Growth, 305, 74-77 (2007).
30. S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, and X. L. Du:Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes , Semicond. Sci. Tech. 21 (10), 1507-1511(2006).
31. Z. X. Mei, Y. Wang, X. L. Du, Z. Q. Zeng, M. J. Ying, H. Zheng, J. F. Jia, Q. K. Xue and Z. Zhang:Growth of In2O3 single crystalline film on sapphire (0001) substrate by molecular beam epitaxy, J. Crystal Growth 289, 686 (2006).
32. Yu-Zi Liu, M.J. Ying, X.L. Du, J.F. Jia, Q.K. Xue, X.D. Han, Z. Zhang: 30 degree rotation domains in wurtzite ZnO films, J. Crystal Growth 290,631 (2006).
33. 王坤, 姚淑德, 侯利娜, 丁志博, 袁洪涛, 杜小龙, 薛其坤:用卢瑟福背散射/沟道研究ZnO/Zn0.9Mg0.1O/ZnO异质结的弹性应变, 《物理学报》55, 2892(2006).
34. X. L. Du, Z. X. Mei, Z. Q. Zeng, M. J. Ying, Y. Wang, Y. Z. Liu, Z. T. Zhou, L. W. Guo, J. F. Jia, Q. K. Xue, and Z. Zhang: Polarity-controlled growth of high-quality ZnO epitaxial films, ECS PV 2005(04) ISBN 1-56677-462-4 424 (2005).
35. M.J. Ying, X. L. Du, Y. Z. Liu, Z. T. Zhou, Z. Q. Zeng, Z. X. Mei, J. F. Jia, H. Chen, Q. K. Xue and Z. Zhang: Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate, Appl. Phys. Lett. 87, 202107(2005).
36. Y. Wang, X. L. Du, Z. X. Mei, Z. Q. Zeng, M. J. Ying, H. T. Yuan, J. F. Jia, Q. K. Xue, and Z. Zhang: Cubic nitridation layers on sapphire substrate and their role in polarity selection of ZnO films, Appl. Phys. Lett. 87,051901 (2005)
37. Yu-Zi Liu, M.J. Ying, X.L. Du, Z.Q. Zeng, Z.X. Mei, J.F. Jia, Q.K. Xue, Z. Zhang: Microstructure and polarity of epitaxial ZnO films grown on LSAT(111) substrate studied by transmission electron microscopy, Phys. Lett. A, 339, 497 (2005).
38. Z. X. Mei, X. L. Du, Y. Wang, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue and, Z. Zhang: Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate, Appl. Phys. Lett. 86,112111 (2005).
39. Q. Qin, L. W. Guo, Z. T. Zhou, H. Chen, X. L. Du, Z. X. Mei, J. F. Jia, Q. K. Xue and J. M. Zhou: Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases, Chin. Phys. Lett., 22, 2298 (2005).
40. 英敏菊, 杜小龙,刘玉资,曾兆权,梅增霞,郑浩,袁洪涛,贾金锋,薛其坤,张泽,LSAT(111)衬底上ZnO单晶薄膜的分子束外延生长,《半导体学报》,26(S), 82(2005).
41. Q.Y. Xu, Y. Wang, Y. G. Wang, X. L. Du, Q. K. Xue ,and Z. Zhang: Polarity determination of ZnO thin film by electron holography, Appl. Phys. Lett., 84, 2067 (2004).
42. H. P. Sun, X. Q. Pan, X. L. Du, Z. X. Mei, Z. Q. Zeng and Q. K. Xue: Defects in ZnO layers grown on sapphire (0001) surface, Appl. Phys. Lett. 85, 4385 (2004).
43. Z. X. Mei, Y. Wang, X. L. Du, Z. Q. Zeng, H. Zheng, J. F. Jia, Q. K. Xue and, Z. Zhang: Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate, J. Appl. Phys. 96, 7108 (2004).
44. Y. Wang, X. L. Du, Q. Y. Xu, Z. X. Mei, Z. Q. Zeng, Q. K. Xue, and Z. Zhang: Defect characteristics of ZnO film grown on (0001) sapphire with an ultra thin gallium wetting layer, J. Crystal Growth, 273, 100 (2004).
45. M. J. Ying, X. L. Du, Z. X. Mei, Z. Q. Zeng, H. Zheng, Y. Wang, J. F. Jia, Z. Zhang and Q. K. Xue: Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films, J. Phys. D 37, 3058–3062 (2004).
46. Y. Wang, Q. Y. Xu, X. L. Du, Z. X. Mei, Z. Q. Zeng, Q. K. Xue, and Z. Zhang: Determination of the polarity of ZnO thin films by electron energy-loss spectroscopy, Phys. Lett. A 320 322–326 (2004).
47. Z.X. Mei, X.L. Du, Z.Q. Zeng, Y. Guo, J. Wang, J.F. Jia and Q.K. Xue: Two-step Growth of MgO Film on Sapphire (0001) Substrate by Radio Frequency plasma-Assisted Molecular Beam Epitaxy, Chin. Phys. Lett. 21, 410 (2004).
48. Z.Q. Zeng, Y. Wang, X.L. Du, Z.X. Mei, X.H. Kong, J.F. Jia, Q.K. Xue and Z. Zhang: Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates, Science in China G, 47, 612 (2004).
49. L.-W. Ji, Y.K. Su, S.J. Chang, C.S. Chang, L.W. Wu, W.C. Lai, X.L. Du, H. Chen: InGaN/GaN multi-quantum dot light-emitting diodes, J. Crystal Growth, 263, 114 (2004).

科研活动

   
科研项目

1,纳米重大专项2007CB936203子课题《准一维氧化物半导体纳米材料的器件构筑与性能测量》,2007~2012。(杜小龙,郭阳)
2,量子调控重大专项2009CB929400子课题《ZnO半导体表面吸附原子表征/探测以及与表面缺陷的相互作用》子课题,2009~2014。(郭阳,梅增霞)
3,国家自然科学基金委重点项目《高质量氧化锌薄膜的界面工程与能带工程及其在光电子器件中的应用》, 批准号:50532090,2006.1~2009.12。(杜小龙)
4,国家自科基金面上项目: 《氧化锌接触特性的研究及其在光电子器件中的应用》,批准号:60606023,2007.1-2009.12。29万元 (梅增霞)
5,国家自科基金面上项目: 《氧化锌半导体自旋注入和自旋过滤的研究》,批准号:10804126,起止年月:2009.1~2011.12。24万元 (郭阳)
6,中国科学院知识创新工程重要方向性项目课题《高质量ZnO基外延薄膜的界面工程、能带工程以及新型量子阱结构与物性研究》,2006.11~2009.11。(杜小龙)
7,国家其他重点项目1项。
8,挪威国研究理事会国际合作项目:2008.1~2011.12.

合作情况

   
项目协作单位
   

指导学生

刘章龙  博士研究生  070205-凝聚态物理  80008-物理研究所

刘尧平  博士研究生  070205-凝聚态物理  80008-物理研究所

梁会力  博士研究生  070205-凝聚态物理  80008-物理研究所

李俊强  博士研究生  070205-凝聚态物理  80008-物理研究所

侯尧楠  博士研究生  070205-凝聚态物理  80008-物理研究所

梁   爽   博士研究生  070205-凝聚态物理  80008-物理研究所